Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Mouser Electronics
$1.570
$0.657
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DigiKey
$0.656
$0.468
$0.366
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Verical
$0.341
Farnell
$0.463
$0.340
$0.288
Avnet
Element14
$0.786
$0.579
$0.566
NAC Semi
Ampacity Inc.
$0.290
Native Components
$0.601
Northwest PG Solutions
$0.661
Metaverse IC Inc.
QUARKTWIN TECHNOLOGY LTD
Eastek
Power Field Effect Transistors (FET) DMT6008LFG-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMT6008LFG-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev A/T Site 31/Mar/2021
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Renesas Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Comchip Technology
NC7WZ07P6X
Fairchild Semiconductor
BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;
1N4148WS
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
SS14
Changzhou Starsea Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Kec
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
2N2222A
Semitronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Rfe International
Yangzhou Yangjie Electronics
Taitron Components
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
SMBJ18CA
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Transys Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE;
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
IRLML6401
International Rectifier
IRLML6401 by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage and 34A IDM. Ideal for SWITCHING applications, it features a built-in diode, 33mJ EAS rating, and -55 to 150 °C operating temperature range.
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
FQT7N10LTF
FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.
TN2510N8-G
Microchip Technology
TN2510N8-G by Microchip Technology is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5A IDM, 1.6W Abs Power Dissipation, and operates in ENHANCEMENT MODE. With METAL-OXIDE SEMICONDUCTOR technology and -55 to 150 °C temperature range, it offers fast ton of 20ns and toff of 30ns for efficient performance.
FDS2582
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum DS Breakdown Voltage: 150 V; Maximum Drain Current (Abs) (ID): 4.1 A;
FDS4675
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Drain Current (ID): 11 A; Terminal Position: DUAL;
IRF7343TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
FDB3632_F085
Fairchild Semiconductor's FDB3632_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 12A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.009 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, this transistor has a max power dissipation of 310W and can withstand temperatures up to 175°C.
IRF5210PBF
Infineon Technologies
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
IRF9530
Harris Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
IRLML6401TR
IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
IRF540ZLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
IRF9530NSTRLPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
IRFZ44NS
Vishay Intertechnology
Vishay Intertechnology's IRFZ44NS is a single N-channel FET with 49A max drain current and 94W power dissipation. Ideal for high-power applications, it operates in enhancement mode up to 175°C, making it suitable for various surface-mount designs.
FQA36P15
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Minimum DS Breakdown Voltage: 150 V; Qualification: Not Qualified;
FDB52N20TM
FDB52N20TM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel, single configuration transistor with a built-in diode, making it suitable for switching applications. With a max pulsed drain current of 208A and a max power dissipation of 357W, it offers high performance in a small outline package style.
FDS6890A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7.5 A; Terminal Finish: MATTE TIN;
STP80NF10
STMicroelectronics
STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
BSS123
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
JANTX2N6796U
Defense Logistics Agency
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-CQCC-N15; Maximum Pulsed Drain Current (IDM): 32 A; Operating Mode: ENHANCEMENT MODE;
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DMT6007LFGQ-7
DMT6007LFGQ-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 80A IDM, and 0.006 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 62.5W power dissipation. AEC-Q101 & MIL-STD-202 compliant, it has a temp range of -55 to 150 °C.
DMT6007LFG-7
DMT6007LFG-7 by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 20mJ EAS, and 0.006 ohm RDS(on). Operating from -55 to 150 °C, it's a high-power MOSFET in a small outline package suitable for various electronic designs.
DMT69M8LFV-7
DMT69M8LFV-7 by Diodes Inc. is a N-channel Power FET with 60V DS breakdown voltage, 45A max drain current, and 0.0095 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 42W. The transistor features a built-in diode, avalanche energy rating of 20.6mJ, and can withstand temperatures from -55 to 150°C.
DMT6009LSS-13
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
DMT6007LFGQ-13
DMT6007LFGQ-13 by Diodes Inc. is a N-channel Power FET with 60V DS breakdown voltage, ideal for switching applications. It features 80A max pulsed drain current and 0.006 ohm max drain-source resistance, operating in enhancement mode. This MOSFET has a small outline package style and can withstand temperatures up to 150°C, meeting AEC-Q101 and MIL-STD-202 standards.
DMT6008LFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (Abs) (ID): 60 A; Case Connection: DRAIN;
DMT6016LSS-13
DMT6016LSS-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 7.5A max drain current, and 0.018 ohm on-resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
DMT68M8LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.9 W; Peak Reflow Temperature (C): 260; JESD-30 Code: R-PDSO-G8;
DMT69M8LFV-13
DMT69M8LFV-13 by Diodes Inc. is a N-channel Power FET with 60V DS breakdown voltage and 45A max drain current. Ideal for switching applications, it features a built-in diode, 0.0095 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs, this FET has a small outline package style and can handle up to 42W power dissipation.
DMT6017LSS-13
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
DMT6015LFV-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
DMT61M5SPSW-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Minimum DS Breakdown Voltage: 60 V; Terminal Position: DUAL;
DMT6005LPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260;
DMT6004SPS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 400 A;
DMT6005LSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Reference Standard: MIL-STD-202; JESD-609 Code: e3;
DMT6009LCT
DMT6009LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19.2 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
DMT6004LPS-13
DMT6004LPS-13 by Diodes Inc. is a N-channel Power FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 100A max pulsed drain current, and 0.0028 ohm max drain-source resistance. Suitable for enhancement mode operation in automotive electronics due to AEC-Q101 compliance.
DMT6005LCT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 130 A; Reference Standard: AEC-Q101; Terminal Position: SINGLE;
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