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DL4735A

Diodes Incorporated

DL4735A by Diodes Incorporated

DL4735A by Diodes Inc. is a Zener diode with 6.2V nominal voltage, 41mA test current, and 5% voltage tolerance. It operates b/w -65 to 200°C, has a max power dissipation of 1W, and low dynamic impedance of 2 ohm. Ideal for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,505 parts In-Stock

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1,505

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Inland Empire Components Inc.

USA . 530 parts In-Stock

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530

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Manoshevitz Elec. Sales

Israel . 30 parts In-Stock

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30

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Distributors (Availability)

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AZTECH Wire

Italy . 808 parts In-Stock

1+ parts

$11.531

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808

$11.531

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,436 parts In-Stock

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Argo Parts USA

USA . 2,606 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the DL4735A by Diodes Incorporated, a top-quality Zener Diode designed to deliver reliable performance in a variety of applications. With a manufacturer known for excellence, this product offers customers unmatched value and benefits. Whether you need precise voltage regulation or protection against voltage spikes, the DL4735A provides the solution you're looking for. Trust in Diodes Incorporated for superior quality and performance every time.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good thermal conductivity and high temperature resistance, making it suitable for high power applications.

Working Test Current: 41 mA

The high working test current allows for stable and reliable operation under load conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto PCBs, saving space and reducing manufacturing costs.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent performance and accurate voltage regulation.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for use in various environments without performance degradation.

Maximum Power Dissipation: 1 W

The high maximum power dissipation rating allows for handling of high power levels without failure, ensuring reliability.

Nominal Reference Voltage: 6.2 V

The specific nominal reference voltage of 6.2V allows for precise voltage regulation in circuits.

Technology: ZENER

Zener technology provides stable and accurate voltage regulation, making it ideal for applications requiring precise voltage control.

Technical Specifications

Zener Diodes DL4735A attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2 ohm

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

6.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

END

Maximum Voltage Tolerance:

5 %

Working Test Current:

41 mA

Trade Compliance

DL4735A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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