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DDZ4V7BSF-7

Diodes Incorporated

DDZ4V7BSF-7 by Diodes Incorporated

DDZ4V7BSF-7 by Diodes Inc. is a Zener diode with 4.68V nominal reference voltage, 130 ohm dynamic impedance, and 2.7% voltage tolerance. It operates at a max temperature of 150°C, suitable for applications requiring precise voltage regulation in compact electronic devices.

Median Price

$0.029

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 87,000 parts In-Stock

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ComSIT USA

USA . 26,025 parts In-Stock

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ComSIT Distribution GmbH

Germany . 26,025 parts In-Stock

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Chip Stock

USA . 14,435 parts In-Stock

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Bristol Electronics

USA . 9,000 parts In-Stock

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Vyrian

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Euro-Tech

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IBS Electronics

USA . 3,000 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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Ampacity Inc.

Singapore . 16,132 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.032

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Corohmni

South Africa . 13 parts In-Stock

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Kepictronics

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Lixinc

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Elevate your electronic projects with the DDZ4V7BSF-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-notch quality and reliability in their products. This Zener Diode is perfect for various applications, offering a stable voltage reference and protection against voltage spikes. With its superior performance and durability, customers can trust in the value and benefits that the DDZ4V7BSF-7 brings to their designs. Upgrade your circuits today with this high-quality component.

Feature Benefit Bullets

Working Test Current: 20 mA

The Zener diode can handle a working test current of 20 mA, ensuring stable and reliable performance in a variety of applications.

Surface Mount: YES

The surface mount capability of the Zener diode allows for easy and efficient installation onto circuit boards, saving time and space in electronic designs.

Maximum Voltage Tolerance: 2.7%

The low maximum voltage tolerance of 2.7% ensures precise and accurate voltage regulation, making this Zener diode a reliable choice for voltage reference circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this Zener diode can withstand elevated temperatures without compromising performance, making it suitable for a wide range of environmental conditions.

Maximum Dynamic Impedance: 130 ohm

The low maximum dynamic impedance of 130 ohms allows for efficient voltage regulation and reduces power losses in circuits, making this Zener diode an energy-efficient choice.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures reliable electrical connections and corrosion resistance, improving the longevity and durability of the Zener diode in various operating environments.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation of 0.5 watts enables the Zener diode to handle higher power loads without overheating, ensuring stable and continuous operation in demanding applications.

Maximum Time At Peak Reflow Temperature (s): 30

The Zener diode can withstand a maximum time of 30 seconds at the peak reflow temperature of 260°C during soldering processes, ensuring reliable and secure attachment to circuit boards.

Nominal Reference Voltage: 4.68 V

With a nominal reference voltage of 4.68 volts, this Zener diode provides precise voltage regulation and stability in electronic circuits, making it suitable for voltage reference and regulation applications.

Diode Element Material: SILICON

The Zener diode's silicon-based element material offers high reliability, low leakage current, and stable performance over a wide temperature range, making it a versatile and dependable component in electronic designs.

Technical Specifications

Zener Diodes DDZ4V7BSF-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

130 ohm

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

4.68 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.7 %

Working Test Current:

20 mA

Trade Compliance

DDZ4V7BSF-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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