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D3Z33BF-7

Diodes Incorporated

D3Z33BF-7 by Diodes Incorporated

D3Z33BF-7 by diodes incorporated is a Zener diode with 33V nominal voltage, 2.49% max voltage tolerance, and 40 ohm max dynamic impedance. It operates b/w -65 to 150°C, has a power dissipation of 0.4W, and is ideal for applications requiring precise voltage regulation in compact electronic circuits.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,238 parts In-Stock

1+ parts

$0.120

100+ parts

$0.039

1k+ parts

$0.038

10k+ parts

$0.019

3,238

$0.120

$0.039

$0.038

$0.019

Mouser Electronics

USA . 1,285 parts In-Stock

1+ parts

$0.120

100+ parts

$0.039

1k+ parts

$0.038

10k+ parts

$0.019

1,285

$0.120

$0.039

$0.038

$0.019

Verical

USA . 138,000 parts In-Stock

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-

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$0.019

138,000

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$0.019

Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 36,071 parts In-Stock

1+ parts

$0.016

100+ parts

-

1k+ parts

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36,071

$0.016

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Lixinc

USA . 4,691 parts In-Stock

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4,691

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Perfect Parts

USA . 2,968 parts In-Stock

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2,968

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Northwest PG Solutions

USA . 859 parts In-Stock

1+ parts

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100+ parts

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$3.202

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859

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$3.202

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Native Components

USA . 281 parts In-Stock

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$3.169

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281

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$3.169

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Overview

Discover the D3Z33BF-7 by Diodes Incorporated, a top-tier Zener diode that guarantees exceptional quality and reliability. With a focus on precision engineering, Diodes Incorporated is a trusted manufacturer known for producing cutting-edge components. Ideal for a wide range of applications, Zener diodes play a crucial role in voltage regulation and protection circuits. The D3Z33BF-7 offers unparalleled value with its high performance and stability, providing customers with peace of mind knowing their electronics are in good hands. Explore the endless benefits and advantages this product brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 5 mA

The low test current allows for efficient testing without risking damage to the diode.

Surface Mount: YES

The surface mount feature makes installation easier and more compact, ideal for small electronic devices.

Maximum Voltage Tolerance: 2.49 %

The tight voltage tolerance ensures accurate performance in voltage regulation applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in a variety of environments without compromising performance.

Maximum Dynamic Impedance: 40 ohm

Low dynamic impedance helps in maintaining a stable voltage output under varying load conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance for reliable connections.

Maximum Power Dissipation: 0.4 W

The high power dissipation rating allows for the diode to handle moderate power levels without overheating.

Nominal Reference Voltage: 33 V

The specific reference voltage of 33 V makes this diode suitable for applications requiring precise voltage regulation.

Technology: ZENER

The Zener technology allows for the diode to maintain a stable voltage across a wide range of currents, crucial for voltage regulation purposes.

Technical Specifications

Zener Diodes D3Z33BF-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Nominal Reference Voltage:

33 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2.49 %

Working Test Current:

5 mA

Trade Compliance

D3Z33BF-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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