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BZX84C4V3TS-7-F

Diodes Incorporated

BZX84C4V3TS-7-F by Diodes Incorporated

BZX84C4V3TS-7-F by Diodes Inc. is a Zener diode with 3 elements, working test current of 5mA, and max reverse current of 3uA. It is used in applications requiring a nominal reference voltage of 4.3V, with a max power dissipation of 0.2W and operating temperature range from -65°C to 150°C.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 42,000 parts In-Stock

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Avnet

USA . 3,000 parts In-Stock

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Vyrian

USA . 15,344 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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Component Stockers USA

USA . 43,720 parts In-Stock

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$0.430

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$0.060

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$0.060

AZTECH Wire

Italy . 844 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Perfect Parts

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Native Components

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Northwest PG Solutions

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Overview

Experience the exceptional quality and reliability of Diodes Incorporated with the BZX84C4V3TS-7-F Zener Diode. Designed with precision and expertise, this component offers superior performance in a wide range of applications. With its small outline package and dual terminal position, this diode is perfect for surface mount configurations. Customers can trust in the value and benefits provided by this high-quality product, making it an essential choice for their electronic projects. Choose Diodes Incorporated for excellence in innovation and technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the zener diode, ensuring a longer lifespan.

Working Test Current: 5 mA

With a working test current of 5 mA, this zener diode can reliably operate within its specified parameters, providing consistent performance in various circuit applications.

Maximum Reverse Current: 3 uA

The low maximum reverse current of 3 uA indicates the high efficiency and low leakage of this zener diode, making it suitable for precision electronic devices.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this zener diode can withstand high temperature environments, ensuring reliable operation in a wide range of applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for easy and reliable soldering of the zener diode onto a PCB, simplifying the manufacturing process.

Diode Type: ZENER DIODE

Being a zener diode, this product is specifically designed for voltage regulation and protection in electronic circuits, making it a reliable choice for applications requiring stable voltage output.

Technical Specifications

Zener Diodes BZX84C4V3TS-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

4.3 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

1 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.98 %

Working Test Current:

5 mA

Trade Compliance

BZX84C4V3TS-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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