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BZX84C39Q-13-F

Diodes Incorporated

BZX84C39Q-13-F by Diodes Incorporated

BZX84C39Q-13-F by Diodes Inc. is a Zener diode with 39V nominal voltage, 5.13% max voltage tolerance, and 130 ohm dynamic impedance. It is used in automotive applications due to AEC-Q101 standard compliance and can operate b/w -65°C to 150°C, making it suitable for various temperature conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,936 parts In-Stock

1+ parts

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3,936

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,248 parts In-Stock

1+ parts

$1.010

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1,248

$1.010

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AZTECH Wire

Italy . 269 parts In-Stock

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$14.475

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269

$14.475

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Continental Prestige Electronics

USA . 3,708 parts In-Stock

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3,708

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Argo Parts USA

USA . 3,393 parts In-Stock

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3,393

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Bastille Electronics

Australia . 87 parts In-Stock

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87

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Overview

Discover the reliable and high-quality BZX84C39Q-13-F Zener Diode by Diodes Incorporated, designed to meet the demanding needs of various applications. With a focus on precision and performance, Diodes Incorporated ensures top-notch manufacturing standards and innovative technology in every product. Ideal for voltage regulation and protection circuits, this Zener diode offers customers unparalleled value, efficiency, and reliability. Experience the superior benefits of the BZX84C39Q-13-F and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, enhancing durability.

Working Test Current: 2 mA

Suitable for low power applications where a precise current is required.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and improving efficiency.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating environments.

Minimum Operating Temperature: -65 °C

Capable of functioning in extreme cold conditions, increasing its versatility.

Maximum Power Dissipation: 0.35 W

Efficiently handles power dissipation, ensuring stable performance under load.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation applications, ensuring accurate and reliable performance.

Nominal Reference Voltage: 39 V

Provides a consistent reference voltage, essential for maintaining stable circuit operation.

Technical Specifications

Zener Diodes BZX84C39Q-13-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

130 ohm

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5.13 %

Working Test Current:

2 mA

Trade Compliance

BZX84C39Q-13-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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