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BZX84C10TS-7-F

Diodes Incorporated

BZX84C10TS-7-F by Diodes Incorporated

BZX84C10TS-7-F by Diodes Inc. is a Zener diode with 3 elements, working test current of 5 mA, and reverse test voltage of 7 V. It is used in applications requiring precise voltage regulation, such as power supplies and voltage references. With a small outline package style and max operating temperature of 150°C, it offers reliable performance in various electronic circuits.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 158 parts In-Stock

1+ parts

$0.890

100+ parts

$0.392

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$0.179

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$0.120

158

$0.890

$0.392

$0.179

$0.120

Arrow

USA . 3,000 parts In-Stock

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$0.073

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Verical

USA . 3,000 parts In-Stock

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$0.073

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$0.073

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Nova Conductors

Japan . 78 parts In-Stock

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Vyrian

USA . 8,471 parts In-Stock

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NAC Semi

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,732 parts In-Stock

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$0.056

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$0.056

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Continental Prestige Electronics

USA . 6,731 parts In-Stock

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$0.104

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$0.102

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Argo Parts USA

USA . 3,296 parts In-Stock

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$0.104

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$0.101

3,296

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Netroflash

USA . 2,000 parts In-Stock

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$0.104

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$0.104

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AZTECH Wire

Italy . 931 parts In-Stock

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$11.530

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QUARKTWIN TECHNOLOGY LTD

USA . 4,542 parts In-Stock

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Eastek

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,985 parts In-Stock

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Perfect Parts

USA . 1,298 parts In-Stock

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Overview

Unlock the potential of your electronic circuits with the BZX84C10TS-7-F Zener Diode by Diodes Incorporated. Crafted with precision and reliability, this diode offers unrivaled performance in voltage regulation applications. With a nominal reference voltage of 10V and maximum reverse test voltage of 7V, this diode ensures stable and consistent power delivery. Its small outline package and dual terminal position make it easy to integrate into your designs. Trust Diodes Incorporated to deliver quality components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the zener diodes, making them suitable for various applications.

Working Test Current: 5 mA

The high working test current allows for reliable performance under normal operating conditions.

Surface Mount: YES

The surface mount capability makes installation easier and more efficient, especially in compact electronic devices.

Maximum Reverse Current: 0.2 uA

The low maximum reverse current ensures minimal power loss and helps increase overall efficiency.

Maximum Voltage Tolerance: 6 %

The tight voltage tolerance allows for precise control and regulation of voltage levels in circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range ensures reliability and stability in various environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range makes these zener diodes suitable for both industrial and extreme environments.

Maximum Power Dissipation: 0.2 W

The low maximum power dissipation indicates efficient energy usage and heat management.

Diode Type: ZENER DIODE

The zener diode type is specifically designed for voltage regulation and transient voltage suppression in electronic circuits.

Nominal Reference Voltage: 10 V

The nominal reference voltage of 10 V ensures stable and accurate voltage output for various applications.

Technical Specifications

Zener Diodes BZX84C10TS-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

10 V

Maximum Reverse Current:

.2 uA

Reverse Test Voltage:

7 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6 %

Working Test Current:

5 mA

Trade Compliance

BZX84C10TS-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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