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BZX84B5V6Q-7-F

Diodes Incorporated

BZX84B5V6Q-7-F by Diodes Incorporated

BZX84B5V6Q-7-F by Diodes Inc. is a Zener diode with 5 mA test current, 1 uA reverse current, and 2 V reverse test voltage. It is ideal for applications requiring precise voltage regulation in small outline packages. With a max power dissipation of 0.35 W and operating temperature range from -65 to 150 °C, it meets AEC-Q101 standards for automotive use.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,730 parts In-Stock

1+ parts

$0.330

100+ parts

$0.102

1k+ parts

$0.066

10k+ parts

$0.053

1,730

$0.330

$0.102

$0.066

$0.053

Arrow

USA . 99,000 parts In-Stock

1+ parts

-

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$0.053

99,000

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$0.053

Verical

USA . 99,000 parts In-Stock

1+ parts

-

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$0.039

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$0.039

Future Electronics

Canada . 21,000 parts In-Stock

1+ parts

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-

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$0.019

21,000

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-

$0.019

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 1,460 parts In-Stock

1+ parts

$0.140

100+ parts

$0.058

1k+ parts

$0.035

10k+ parts

$0.029

1,460

$0.140

$0.058

$0.035

$0.029

NAC Semi

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.078

30,000

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-

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$0.078

Vyrian

USA . 12,548 parts In-Stock

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12,548

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Chip Stock

USA . 9,676 parts In-Stock

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9,676

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IBS Electronics

USA . 6,000 parts In-Stock

1+ parts

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1k+ parts

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$0.059

6,000

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$0.059

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 74,401 parts In-Stock

1+ parts

$0.210

100+ parts

$0.030

1k+ parts

$0.030

10k+ parts

$0.020

74,401

$0.210

$0.030

$0.030

$0.020

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.229

100+ parts

$0.227

1k+ parts

$0.218

10k+ parts

-

3,000

$0.229

$0.227

$0.218

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Native Components

USA . 665 parts In-Stock

1+ parts

$14.240

100+ parts

-

1k+ parts

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10k+ parts

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665

$14.240

-

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Northwest PG Solutions

USA . 2,109 parts In-Stock

1+ parts

$15.664

100+ parts

$14.098

1k+ parts

-

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2,109

$15.664

$14.098

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QUARKTWIN TECHNOLOGY LTD

USA . 28,862 parts In-Stock

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28,862

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Perfect Parts

USA . 23,520 parts In-Stock

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23,520

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Glotronic Ltd.

UK . 16,000 parts In-Stock

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16,000

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

1+ parts

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3,000

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Lixinc

USA . 2,297 parts In-Stock

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2,297

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Overview

Discover the unparalleled quality of the BZX84B5V6Q-7-F Zener Diode by Diodes Incorporated. With a reputation for excellence, this small outline package delivers reliable performance in a wide range of applications. Benefit from its low reverse current, high voltage tolerance, and impressive power dissipation capabilities. Whether you're in automotive, industrial, or consumer electronics, this product offers exceptional value and peace of mind. Trust Diodes Incorporated to provide the innovation and precision you need to elevate your designs. Choose the BZX84B5V6Q-7-F for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring long-term reliability in various environments.

Working Test Current: 5 mA

Optimal working test current ensures stable performance and efficiency of the diode.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and helps in maintaining the overall efficiency of the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various applications without the risk of overheating or malfunction.

Technical Specifications

Zener Diodes BZX84B5V6Q-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

40 ohm

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Maximum Knee Impedance:

400 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.35 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

5.6 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

2 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

2.5 mV/Cel

Maximum Voltage Tolerance:

2 %

Working Test Current:

5 mA

Trade Compliance

BZX84B5V6Q-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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