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BAS70-05-7

Diodes Incorporated

BAS70-05-7 by Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 9,081 parts In-Stock

1+ parts

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9,081

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Vyrian

USA . 3,697 parts In-Stock

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3,697

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Semi Source

USA . 2,863 parts In-Stock

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2,863

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R&J Components

USA . 2,862 parts In-Stock

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2,862

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A2Z Electronics, Inc.

USA . 2,415 parts In-Stock

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2,415

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Bristol Electronics

USA . 2,415 parts In-Stock

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2,415

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Executive Electronics, Inc.

USA . 460 parts In-Stock

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460

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Prism Electronics

USA . 142 parts In-Stock

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142

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EPE Components Inc.

USA . 55 parts In-Stock

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55

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 55 parts In-Stock

1+ parts

$0.033

100+ parts

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55

$0.033

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.114

100+ parts

$0.104

1k+ parts

$0.093

10k+ parts

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60

$0.114

$0.104

$0.093

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AZTECH Wire

Italy . 636 parts In-Stock

1+ parts

$11.490

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636

$11.490

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Native Components

USA . 357 parts In-Stock

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$31.717

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$30.448

357

$31.717

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$30.448

Northwest PG Solutions

USA . 1,363 parts In-Stock

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$34.888

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1,363

$34.888

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Component Stockers USA

USA . 701 parts In-Stock

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$99.990

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701

$99.990

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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9,000

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QUARKTWIN TECHNOLOGY LTD

USA . 8,843 parts In-Stock

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Lixinc

USA . 8,378 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Metaverse IC Inc.

Canada . 2,788 parts In-Stock

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2,788

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Perfect Parts

USA . 125 parts In-Stock

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125

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Technical Specifications

Diodes & Rectifiers BAS70-05-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.41 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.1 A

No. of Elements:

2

No. of Terminals:

3

Maximum Output Current:

.07 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

70 V

Maximum Reverse Recovery Time:

.005 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

BAS70-05-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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