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BAS116UDJ-7

Diodes Incorporated

BAS116UDJ-7 by Diodes Incorporated

BAS116UDJ-7 by Diodes Inc. is a rectifier diode with max reverse recovery time of 3us and max reverse current of 0.5uA. It operates b/w -55 to 150°C, has a peak reflow temp of 260°C, and can handle a max output current of 0.215A. Ideal for applications requiring high-speed switching in compact electronic devices.

Median Price

$0.216

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 6,055 parts In-Stock

1+ parts

-

100+ parts

$0.286

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$0.159

10k+ parts

$0.130

6,055

-

$0.286

$0.159

$0.130

Farnell

UK . 2,543 parts In-Stock

1+ parts

-

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$0.147

1k+ parts

$0.084

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2,543

-

$0.147

$0.084

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Distributors (In-Stock)

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Chip Stock

USA . 22,452 parts In-Stock

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Inventory MP

USA . 19,910 parts In-Stock

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Bristol Electronics

USA . 19,910 parts In-Stock

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Ashlea Components Ltd

UK . 8,205 parts In-Stock

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Vyrian

USA . 3,317 parts In-Stock

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VNN

France . 1,553 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,502 parts In-Stock

1+ parts

$0.117

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$0.117

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Corohmni

South Africa . 399 parts In-Stock

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$0.165

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$0.165

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AZTECH Wire

Italy . 699 parts In-Stock

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$16.640

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$16.640

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Perfect Parts

USA . 51,948 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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Lixinc

USA . 7,553 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Continental Prestige Electronics

USA . 6,785 parts In-Stock

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$0.180

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$0.110

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$0.075

6,785

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$0.180

$0.110

$0.075

Argo Parts USA

USA . 4,012 parts In-Stock

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4,012

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Aranea Global

USA . 1,000 parts In-Stock

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GreenTree Electronics

Israel . 150 parts In-Stock

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150

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Overview

Unlock the power of innovation with the BAS116UDJ-7 by Diodes Incorporated. This high-quality diode offers unmatched reliability and performance, making it a top choice for a wide range of applications. Whether you need to rectify current or protect your circuit from reverse voltage, this product delivers exceptional results. With its advanced design and durable construction, the BAS116UDJ-7 is built to last. Trust Diodes Incorporated to provide cutting-edge solutions that exceed expectations. Elevate your projects with the BAS116UDJ-7 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this diode rectifier lightweight and durable.

Config: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for better control and efficiency in the functioning of the diode rectifier.

Maximum Reverse Recovery Time: 3 us

The low maximum reverse recovery time ensures fast switching characteristics, making this diode rectifier suitable for high-speed applications.

Maximum Reverse Current: 0.5 uA

The low maximum reverse current helps in minimizing power loss and improving the efficiency of the diode rectifier.

Surface Mount: YES

Being surface mountable simplifies the installation process and saves space on the circuit board.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable performance even in demanding environmental conditions.

Maximum Power Dissipation: 0.25 W

The low maximum power dissipation helps in reducing heat generation and improving overall efficiency.

Diode Type: RECTIFIER DIODE

The diode rectifier type ensures efficient conversion of alternating current (AC) to direct current (DC) in various electronic circuits.

Technical Specifications

Diodes & Rectifiers BAS116UDJ-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.215 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Current:

.5 uA

Maximum Reverse Recovery Time:

3 us

Reverse Test Voltage:

75 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS116UDJ-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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