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AZ432AZTR-E1

Diodes Incorporated

AZ432AZTR-E1 by Diodes Incorporated

AZ432AZTR-E1 by Diodes Inc. is a trimmable voltage reference IC with adjustable output from 1.25V to 18V, ideal for automotive applications. It operates b/w -40°C to 125°C, with a max output current of 0.1A and low temp coefficient of 20 ppm/°C in a cylindrical package style.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,380 parts In-Stock

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-

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$0.165

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$0.105

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$0.093

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$0.165

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$0.093

Farnell

UK . 1,180 parts In-Stock

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-

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$0.104

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$0.090

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1,180

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$0.104

$0.090

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VNN

France . 24,614 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 91 parts In-Stock

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Semicontronic

India . 917 parts In-Stock

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$0.122

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$0.119

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$0.118

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917

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Corohmni

South Africa . 311 parts In-Stock

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$0.139

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Continental Prestige Electronics

USA . 1,415 parts In-Stock

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$0.401

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$0.168

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$0.100

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$0.082

1,415

$0.401

$0.168

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$0.082

Aztec Data Supply Inc.

USA . 133 parts In-Stock

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$16.601

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133

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Metaverse IC Inc.

Canada . 138,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 19,190 parts In-Stock

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CPlus Electronics

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QUARKTWIN TECHNOLOGY LTD

USA . 9,783 parts In-Stock

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Argo Parts USA

USA . 3,042 parts In-Stock

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Perfect Parts

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Microchip USA

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Aranea Global

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50

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Overview

Unlock precision and reliability with the AZ432AZTR-E1 by Diodes Incorporated. As a leading manufacturer in voltage references, Diodes Incorporated delivers superior quality and performance in every product. The AZ432AZTR-E1 offers trim or adjustable output, making it ideal for a wide range of applications. With a maximum output voltage of 18V and a temperature grade of automotive, this three-terminal voltage reference ensures consistent and accurate results in any environment. Elevate your projects with the value and benefits that only Diodes Incorporated can provide.

Feature Benefit Bullets

Trim or Adjustable Output (V): YES

Having a trim or adjustable output allows for flexibility in the voltage output, making it suitable for a variety of applications requiring different voltage levels.

Package Shape: ROUND

The round package shape is a compact and space-saving design, making it easy to integrate into various electronic devices or systems.

No. of Terminals: 3

The three terminals provide a simple and easy way to connect the voltage reference to other components, enhancing overall usability.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this voltage reference can withstand elevated temperatures, ensuring reliable performance in challenging environments.

Minimum Output Voltage: 1.25 V

The minimum output voltage of 1.25V allows for precise and stable voltage references, crucial for accurate measurements and control systems.

Technology: BIPOLAR

Utilizing bipolar technology offers high accuracy and stability in voltage references, making this product suitable for applications requiring precise voltage regulation.

Technical Specifications

Voltage References AZ432AZTR-E1 attributes and parameters. Explore more Voltage References devices from Diodes Incorporated

Specs

JESD-30 Code:

O-XBCY-T3

JESD-609 Code:

e3

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.1 A

Maximum Output Voltage:

18 V

Minimum Output Voltage:

1.25 V

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SIP3,.1,50

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Sub-Category:

Voltage References

Surface Mount:

NO

Technology:

BIPOLAR

Max Voltage Temp Coef:

20 ppm/Cel

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Trim or Adjustable Output (V):

YES

Trade Compliance

AZ432AZTR-E1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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