Loading...

APX803L-31SA-7

Diodes Incorporated

APX803L-31SA-7 by Diodes Incorporated

APX803L-31SA-7 by Diodes Inc. is a Power Management IC with 3 terminals, operating b/w -40 to 85°C. It has a nominal voltage of 2.9V and threshold voltage of +3.1V, suitable for industrial applications requiring power supply support circuits in compact spaces due to its small outline package style.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10 parts In-Stock

1+ parts

$0.240

100+ parts

$0.124

1k+ parts

$0.103

10k+ parts

$0.093

10

$0.240

$0.124

$0.103

$0.093

Mouser Electronics

USA . 4 parts In-Stock

1+ parts

$0.580

100+ parts

$0.213

1k+ parts

$0.140

10k+ parts

$0.090

4

$0.580

$0.213

$0.140

$0.090

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.082

30,000

-

-

-

$0.082

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 2,271 parts In-Stock

1+ parts

$0.705

100+ parts

-

1k+ parts

-

10k+ parts

-

2,271

$0.705

-

-

-

Northwest PG Solutions

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

-

-

-

-

Native Components

USA . 367 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

367

-

-

-

-

Overview

Upgrade your power management system with the APX803L-31SA-7 from Diodes Incorporated. Known for their reliable and high-quality products, Diodes Incorporated delivers superior performance in the Power Management ICs category. This small outline, thin profile IC is perfect for industrial applications, offering a nominal supply voltage of 2.9V and a nominal threshold voltage of +3.1V. With a wide operating temperature range and dual terminal position, this IC provides customers with unmatched value and efficiency. Experience the benefits of advanced power supply support circuitry with the APX803L-31SA-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and reliability for the power management IC.

Surface Mount: YES

Easier and more efficient integration onto circuit boards.

Nominal Supply Voltage (Vsup): 2.9 V

Suitable for various applications that require a stable voltage supply.

Package Style: SMALL OUTLINE, THIN PROFILE

Allows for space-saving and compact design in electronic devices.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in high-temperature environments.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for the terminals.

Width (mm): 1.3 mm

Contributes to the compact size of the power management IC.

Minimum Supply Voltage (Vsup): 0.9 V

Allowing operation at lower supply voltages for energy-efficient applications.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with varying temperature conditions.

Maximum Supply Voltage (Vsup): 5.5 V

Can handle higher supply voltages for versatile applications.

Technical Specifications

Power Management ICs APX803L-31SA-7 attributes and parameters. Explore more Power Management ICs devices from Diodes Incorporated

Specs

Additional Features:

DETECTION VOLTAGE IS 3.1V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage (Vsup):

2.9 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.915 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.1V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.3 mm

Trade Compliance

APX803L-31SA-7 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20