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AL1666AS-13

Diodes Incorporated

AL1666AS-13 by Diodes Incorporated

LED DISPLAY DRIVER; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,965 parts In-Stock

1+ parts

$1.140

100+ parts

$0.443

1k+ parts

$0.304

10k+ parts

$0.222

7,965

$1.140

$0.443

$0.304

$0.222

DigiKey

USA . 2,489 parts In-Stock

1+ parts

$1.140

100+ parts

$0.442

1k+ parts

$0.304

10k+ parts

$0.233

2,489

$1.140

$0.442

$0.304

$0.233

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.100

8,000

-

-

-

$1.100

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 125,351 parts In-Stock

1+ parts

$0.640

100+ parts

$0.430

1k+ parts

$0.270

10k+ parts

$0.210

125,351

$0.640

$0.430

$0.270

$0.210

Microchip USA

USA . 1,235 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

1,235

$1.631

-

-

-

Native Components

USA . 736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

736

-

-

-

-

Northwest PG Solutions

USA . 525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

525

-

-

-

-

Technical Specifications

Graphics Display Drivers AL1666AS-13 attributes and parameters. Explore more Graphics Display Drivers devices from Diodes Incorporated

Specs

Interface IC Type:

JESD-609 Code:

e3

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Trade Compliance

AL1666AS-13 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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