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AC857BQ-7

Diodes Incorporated

AC857BQ-7 by Diodes Incorporated

AC857BQ-7 by Diodes Inc. is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 200MHz. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mounting.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,925 parts In-Stock

1+ parts

$0.190

100+ parts

$0.072

1k+ parts

$0.046

10k+ parts

-

2,925

$0.190

$0.072

$0.046

-

Mouser Electronics

USA . 2,396 parts In-Stock

1+ parts

$0.190

100+ parts

$0.073

1k+ parts

$0.049

10k+ parts

$0.027

2,396

$0.190

$0.073

$0.049

$0.027

DigiKey

USA . 749 parts In-Stock

1+ parts

$0.190

100+ parts

$0.073

1k+ parts

$0.047

10k+ parts

$0.032

749

$0.190

$0.073

$0.047

$0.032

Avnet

USA . 183,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.018

183,000

-

-

-

$0.018

Arrow

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.027

12,000

-

-

-

$0.027

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.027

12,000

-

-

-

$0.027

Farnell

UK . 2,925 parts In-Stock

1+ parts

-

100+ parts

$0.070

1k+ parts

$0.036

10k+ parts

$0.028

2,925

-

$0.070

$0.036

$0.028

Element14

Singapore . 2,925 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.038

10k+ parts

$0.029

2,925

-

$0.066

$0.038

$0.029

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 430 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

430

$0.166

-

-

$0.159

Northwest PG Solutions

USA . 853 parts In-Stock

1+ parts

$0.182

100+ parts

-

1k+ parts

-

10k+ parts

$0.161

853

$0.182

-

-

$0.161

Continental Prestige Electronics

USA . 2,955 parts In-Stock

1+ parts

$0.219

100+ parts

$0.090

1k+ parts

$0.037

10k+ parts

$0.034

2,955

$0.219

$0.090

$0.037

$0.034

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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25,000

-

-

-

-

Lixinc

USA . 5,596 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,596

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

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-

-

Overview

Enhance your electronic designs with the AC857BQ-7 by Diodes Incorporated. Known for their top-notch quality and reliability, Diodes Incorporated offers a wide range of components to meet all your needs. The AC857BQ-7 belongs to the Small Signal Bipolar Junction Transistors category and is perfect for switching applications. With a high DC current gain of 220 and a maximum collector-emitter voltage of 45V, this PNP transistor provides exceptional performance. Its compact size and surface mount capabilities make it ideal for various projects. Trust Diodes Incorporated to deliver value and innovation with the AC857BQ-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, ideal for portable electronic devices.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in high-side switching applications, providing greater flexibility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit layout and reduces component count, making it cost-effective and easy to implement.

Transistor Application: SWITCHING

Designed for switching applications, ensuring fast response times and efficient performance in various electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy automated assembly, saving time and cost in manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape enables efficient use of board space and facilitates compact designs in electronic devices.

Minimum DC Current Gain (hFE): 220

High minimum DC current gain ensures consistent and stable transistor operation, enhancing overall circuit performance.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating provides improved reliability and protection against voltage spikes in the circuit.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor is suitable for low to moderate power applications, offering a balance between performance and efficiency.

Terminal Finish: MATTE TIN

Matte tin finish on terminals enhances solderability and ensures reliable electrical connections during assembly and operation.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for applications that require rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) AC857BQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

AC857BQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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