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HMC939LP4E

Analog Devices

HMC939LP4E by Analog Devices

HMC939LP4E by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 7.5 dB Max Insertion Loss, and 25.05 dBm Max Input Power (CW). It operates b/w 100 MHz to 33 GHz, making it ideal for signal attenuation in high-frequency applications. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,014 parts In-Stock

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2,014

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Digiode

USA . 648 parts In-Stock

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648

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Chip Stock

USA . 145 parts In-Stock

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145

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Inventory MP

USA . 4 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 2,241 parts In-Stock

1+ parts

$1.749

100+ parts

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$1.627

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2,241

$1.749

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$1.627

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IDEA Electronic Components Group

UK . 1,990 parts In-Stock

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$1.881

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$1.787

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1,990

$1.881

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$1.787

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DigiPath Technology Company

USA . 1,535 parts In-Stock

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$2.934

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$2.817

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1,535

$2.934

$2.817

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AZTECH Wire

Italy . 862 parts In-Stock

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$9.135

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862

$9.135

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One Stop Electronics

USA . 651 parts In-Stock

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$12.000

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651

$12.000

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Semicontronic

India . 998 parts In-Stock

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$32.000

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$31.200

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$31.040

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998

$32.000

$31.200

$31.040

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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Corphita

USA . 31 parts In-Stock

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Overview

Elevate your RF/Microwave systems with the HMC939LP4E by Analog Devices. As a leading manufacturer in the industry, Analog Devices delivers top-quality components for various applications. The HMC939LP4E offers a nominal attenuation of 31 dB and maximum input power of 25.05 dBm, making it ideal for a wide range of RF and microwave attenuator needs. With a construction that ensures durability and reliability, this variable attenuator provides unmatched performance at temperatures ranging from -40°C to 85°C. Experience the value and benefits of precision engineering with the HMC939LP4E, designed to enhance your system's efficiency and functionality.

Feature Benefit Bullets

Maximum Input Power (CW): 25.05 dBm

With a high maximum input power capacity, this attenuator can handle strong signals without being damaged, ensuring durability and reliable performance.

Nominal Attenuation: 31 dB

Provides significant signal reduction, allowing for precise adjustment of signal strength in RF/Microwave applications.

Construction: COMPONENT

Component construction typically means high quality and reliability, ensuring a durable and long-lasting product.

Maximum Operating Temperature: 85 °C

Can operate efficiently even in high-temperature environments, providing consistent performance under varying conditions.

Minimum Operating Temperature: -40 °C

Capable of functioning in cold temperatures as well, making it suitable for a wide range of operating environments.

Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier

The terminal finish protects against corrosion and ensures good electrical conductivity, enhancing the overall performance and lifespan of the product.

Maximum Insertion Loss: 7.5 dB

With low insertion loss, the attenuator minimizes signal loss during attenuation, preserving signal quality and integrity.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator allows for adjustable attenuation levels, providing flexibility in signal management for various applications.

Characteristic Impedance: 50 ohm

Matches the impedance of common RF systems, ensuring optimal signal transfer and compatibility with existing equipment.

Minimum Operating Frequency: 100 MHz

Capable of attenuating signals effectively at low frequencies, making it suitable for a wide range of RF/Microwave applications.

Maximum Operating Frequency: 33000 MHz

Covers a broad frequency range, accommodating a variety of RF/Microwave systems and applications.

Technical Specifications

RF/Microwave Attenuators HMC939LP4E attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

31 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

25.05 dBm

Maximum Insertion Loss:

7.5 dB

JESD-609 Code:

e3

Maximum Operating Frequency:

33000 MHz

Minimum Operating Frequency:

100 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn) - with Nickel (Ni) barrier

Trade Compliance

HMC939LP4E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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