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HMC641LP4E

Analog Devices

HMC641LP4E by Analog Devices

Analog Devices' HMC641LP4E is a SP4T RF/Microwave switch with 50 ohm impedance, offering 30 dB isolation and 4.2 dB insertion loss up to 20 GHz. It operates from -40°C to 85°C, handles CW input power of 23.98 dBm, and has a compression point at 15 dBm. Ideal for applications requiring high-frequency signal routing in component construction setups.

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Vyrian

USA . 2,735 parts In-Stock

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Digiode

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Chip Stock

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Parana Technologies

USA . 1,845 parts In-Stock

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$2.159

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$2.007

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IDEA Electronic Components Group

UK . 976 parts In-Stock

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DigiPath Technology Company

USA . 284 parts In-Stock

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$3.621

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$3.476

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AZTECH Wire

Italy . 293 parts In-Stock

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Semicontronic

India . 845 parts In-Stock

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$22.425

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One Stop Electronics

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Overview

Experience top-of-the-line performance with the HMC641LP4E RF/Microwave Switch from Analog Devices. This cutting-edge component offers unparalleled quality and reliability, making it perfect for a wide range of applications. With a maximum insertion loss of just 4.2 dB and impressive isolation of 30 dB, this SP4T switch delivers exceptional results every time. Trust Analog Devices to provide you with the best in RF technology, ensuring seamless integration and superior performance. Upgrade your systems today with the HMC641LP4E and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resilient, making the switch resistant to environmental factors and ensuring a longer lifespan.

Maximum Input Power (CW): 23.98 dBm

High maximum input power allows the switch to handle strong signals without distortion, ensuring reliable performance.

Compression Point (1 dB): 15 dBm

The high compression point indicates that the switch can handle high power levels while maintaining linearity and signal integrity.

Construction: COMPONENT

Component-based construction provides flexibility and ease of integration into various systems.

Power Supplies (V): -5

Low power supply voltage requirement enables efficient power management and reduces power consumption.

No. of Terminals: 24

Having a high number of terminals allows for versatile connectivity options and potential for complex signal routing.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance even in harsh environmental conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good conductivity and corrosion resistance, enhancing the switch's overall reliability.

Maximum Insertion Loss: 4.2 dB

Low insertion loss minimizes signal attenuation, ensuring efficient signal transmission through the switch.

Nominal On Time: 0.088 us

Fast nominal on time ensures quick switching speed, reducing signal delay and improving overall system performance.

Technology: GAAS

Gallium arsenide technology offers high frequency capabilities and low noise performance, ideal for RF/microwave applications.

RF or Microwave Device Type: SP4T

Being a SP4T switch provides multiple options for signal routing, allowing for more flexible system designs.

Characteristic Impedance: 50 ohm

Matching impedance with standard 50 ohm ensures optimal signal transfer and minimizes reflections in the system.

Minimum Isolation: 30 dB

High isolation level reduces signal crosstalk and interference, improving overall signal quality and system performance.

Minimum Operating Frequency: 0 MHz

Support for low operating frequencies provides versatility for a wide range of applications and compatibility with various signal sources.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easier and more compact installation, saving space and simplifying manufacturing processes.

Maximum Operating Frequency: 20000 MHz

High maximum operating frequency enables support for a wide range of RF/microwave signals, making the switch suitable for diverse applications.

Port Termination: ABSORPTIVE

Absorptive port termination reduces signal reflections and minimizes signal loss, ensuring optimal signal integrity and reliability.

Technical Specifications

RF/Microwave Switches HMC641LP4E attributes and parameters. Explore more RF/Microwave Switches devices from Analog Devices

Specs

Compression Point (1 dB):

15 dBm

Additional Features:

HIGH ISOLATION

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

23.98 dBm

Maximum Insertion Loss:

4.2 dB

Minimum Isolation:

30 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

24

Nominal On Time:

.088 us

Maximum Operating Frequency:

20000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC24,.16SQ,20

Port Termination:

ABSORPTIVE

Power Supplies (V):

-5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC641LP4E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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