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HMC523LC4

Analog Devices

HMC523LC4 by Analog Devices

HMC523LC4 by Analog Devices is a RF/Microwave Mixer with 24 terminals, operating from -55 to 85°C. It features GaAs technology, 50 ohm impedance, and offers image rejection. With a frequency range of 15-23 GHz and max conversion loss of 13 dB, it's ideal for surface mount applications requiring high input power handling up to 20 dBm.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 6,817 parts In-Stock

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Digiode

USA . 611 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 31 parts In-Stock

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Prism Electronics

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Parana Technologies

USA . 2,087 parts In-Stock

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$1.768

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$1.644

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$1.768

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IDEA Electronic Components Group

UK . 318 parts In-Stock

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$1.901

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$1.806

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DigiPath Technology Company

USA . 1,140 parts In-Stock

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$2.966

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$2.847

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AZTECH Wire

Italy . 298 parts In-Stock

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$15.558

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One Stop Electronics

USA . 1,617 parts In-Stock

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$20.000

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Semicontronic

India . 1,358 parts In-Stock

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$21.000

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$20.475

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$20.370

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RC Electronics

USA . 3,075 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Unlock the power of seamless RF/Microwave mixing with the Analog Devices HMC523LC4. Renowned for its reliability and precision engineering, Analog Devices brings you a top-of-the-line component that guarantees optimal performance in a variety of applications. From telecommunications to radar systems, this versatile mixer delivers unmatched value and efficiency. Say goodbye to compromise and hello to excellence with the HMC523LC4.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package provides excellent thermal conductivity and insulation, making it ideal for high power applications and ensuring durability.

Maximum Input Power (CW): 20 dBm

High maximum input power capacity allows for reliable operation under high power conditions, making it suitable for demanding RF applications.

Construction: COMPONENT

Component construction offers versatility and flexibility in integration with other RF components or systems.

No. of Terminals: 24

Higher number of terminals allow for more connections and flexibility in circuit design and functionality.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures stable performance even in challenging thermal conditions.

Minimum Operating Temperature: -55 °C

Wide range of minimum operating temperature allows for operation in extreme temperature environments.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

Gold terminal finish with nickel barrier provides excellent conductivity and corrosion resistance for reliable signal transmission.

Technology: GAAS

Gallium Arsenide technology offers high performance, low noise characteristics, and efficient operation in RF/microwave applications.

RF or Microwave Device Type: IMAGE REJECTION

Image rejection mixer helps eliminate unwanted signals and improve signal clarity and quality in RF systems.

Characteristic Impedance: 50 ohm

Standard 50 ohm characteristic impedance ensures compatibility and efficient signal transfer in RF systems.

Maximum Conversion Loss: 13 dB

Low maximum conversion loss ensures minimal signal degradation during frequency conversion, maintaining signal integrity.

Minimum Operating Frequency: 15000 MHz

Low minimum operating frequency allows for operation in a wide range of frequency bands, expanding the product's utility.

Mounting Feature: SURFACE MOUNT

Surface mount design offers easy and secure installation, making it suitable for compact and densely packed RF systems.

Maximum Operating Frequency: 23000 MHz

High maximum operating frequency enables operation in diverse RF frequency ranges, providing flexibility in application use.

Technical Specifications

RF/Microwave Mixers HMC523LC4 attributes and parameters. Explore more RF/Microwave Mixers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

13 dB

Maximum Input Power (CW):

20 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Terminals:

24

Maximum Operating Frequency:

23000 MHz

Minimum Operating Frequency:

15000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

Package Equivalence Code:

LCC24,.16SQ,20

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Trade Compliance

HMC523LC4 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5895-01-642-5784, 5895016425784

NIIN

016425784

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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