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HMC470LP3

Analog Devices

HMC470LP3 by Analog Devices

HMC470LP3 by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 26.99 dBm Max Input Power (CW), and 2 dB Max Insertion Loss. It is a GAAS technology-based VARIABLE ATTENUATOR suitable for applications requiring precise signal attenuation in the frequency range of 0-3000 MHz.

Median Price

$5.520

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3 parts In-Stock

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Digiode

USA . 642 parts In-Stock

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$5.244

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Vyrian

USA . 4,946 parts In-Stock

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Resion

USA . 38 parts In-Stock

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Prism Electronics

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Inventory MP

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Bristol Electronics

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Parana Technologies

USA . 4,460 parts In-Stock

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$1.704

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$1.584

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$1.704

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IDEA Electronic Components Group

UK . 2,242 parts In-Stock

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$1.832

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$1.740

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DigiPath Technology Company

USA . 923 parts In-Stock

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$2.858

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$2.744

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Semicontronic

India . 3 parts In-Stock

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$4.690

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$4.573

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$4.549

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Corphita

USA . 886 parts In-Stock

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$4.968

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Component Stockers USA

USA . 619 parts In-Stock

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$99.990

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Perfect Parts

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Metaverse IC Inc.

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Overview

Experience the superior quality and performance of the Analog Devices HMC470LP3 RF/Microwave Attenuator. Designed by a trusted manufacturer, this component offers precise control over signal attenuation with a nominal 31 dB and a maximum insertion loss of only 2 dB. Ideal for a wide range of applications, from wireless infrastructure to aerospace and defense, the HMC470LP3 delivers reliability and consistency in every use. Upgrade your systems with this cutting-edge technology and discover the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and insulation, making the product suitable for various environments and applications.

Maximum Input Power (CW): 26.99 dBm

The high maximum input power handling capability allows for reliable and stable performance even in high-power situations.

Nominal Attenuation: 31 dB

The high attenuation value ensures effective signal reduction and control, making it ideal for adjusting signal strength in RF/Microwave applications.

Construction: COMPONENT

The component construction ensures high precision and stability, leading to accurate and consistent attenuation performance.

Power Supplies (V): 5

The low power supply requirement makes it energy-efficient and cost-effective to operate.

No. of Terminals: 16

Having multiple terminals allows for versatile connectivity options and integration into complex systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures reliability and performance under varying environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the product can withstand cold temperatures, making it suitable for a wide range of applications.

Terminal Finish: TIN LEAD

The tin lead finish provides good conductivity and solderability, ensuring secure and reliable connections for long-term usage.

Maximum Insertion Loss: 2 dB

The low insertion loss value minimizes signal loss and distortion, maintaining signal integrity and quality.

Technology: GAAS

The GaAs technology offers high performance and reliability, making the product suitable for demanding RF/Microwave applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator allows for adjustable signal attenuation, providing flexibility and control in signal management.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF systems, ensuring seamless integration and compatibility with existing equipment.

Minimum Operating Frequency: 0 MHz

The ability to operate at 0 MHz allows for versatile use across a wide range of frequencies and applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature enables easy and secure installation on circuit boards, optimizing space and facilitating assembly processes.

Maximum Operating Frequency: 3000 MHz

The high maximum operating frequency covers a broad range of RF/Microwave frequencies, making the product suitable for various applications.

Technical Specifications

RF/Microwave Attenuators HMC470LP3 attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Additional Features:

CMOS COMPATIBLE

Nominal Attenuation:

31 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

26.99 dBm

Maximum Insertion Loss:

2 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

3000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

TIN LEAD

Trade Compliance

HMC470LP3 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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