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HMC467LP3

Analog Devices

HMC467LP3 by Analog Devices

HMC467LP3 by Analog Devices is a RF/Microwave Attenuator with 6 dB Nominal Attenuation, 1.2 dB Max Insertion Loss, and 30 dBm Max Input Power (CW). It is a VARIABLE ATTENUATOR suitable for applications requiring precise signal attenuation in the frequency range of 0-6000 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,024 parts In-Stock

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6,024

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Digiode

USA . 798 parts In-Stock

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798

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 972 parts In-Stock

1+ parts

$1.011

100+ parts

-

1k+ parts

$0.940

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972

$1.011

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$0.940

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IDEA Electronic Components Group

UK . 1,948 parts In-Stock

1+ parts

$1.087

100+ parts

-

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$1.033

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1,948

$1.087

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$1.033

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DigiPath Technology Company

USA . 1,601 parts In-Stock

1+ parts

$1.696

100+ parts

$1.628

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-

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1,601

$1.696

$1.628

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One Stop Electronics

USA . 290 parts In-Stock

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$2.000

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290

$2.000

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AZTECH Wire

Italy . 344 parts In-Stock

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$15.678

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344

$15.678

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Semicontronic

India . 277 parts In-Stock

1+ parts

$26.000

100+ parts

$25.350

1k+ parts

$25.220

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277

$26.000

$25.350

$25.220

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Ampacity Inc.

Singapore . 202 parts In-Stock

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$28.000

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202

$28.000

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Corphita

USA . 730 parts In-Stock

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730

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Overview

Unlock unparalleled performance and reliability with the HMC467LP3 by Analog Devices. As a leader in RF/Microwave Attenuators, Analog Devices ensures top-tier quality in every component. This variable attenuator boasts a maximum input power of 30 dBm and nominal attenuation of 6 dB, making it perfect for a wide range of applications. From telecommunications to aerospace, this product offers customers unmatched value, benefits, and advantages. Upgrade your systems with the HMC467LP3 and experience the difference today.

Feature Benefit Bullets

Maximum Input Power (CW): 30 dBm

The high maximum input power allows this attenuator to handle strong signals without getting damaged, ensuring reliable performance in various applications.

Nominal Attenuation: 6 dB

The 6 dB attenuation level provides a moderate level of signal reduction, making it suitable for adjusting signal strength in RF and microwave circuits.

Construction: COMPONENT

The use of high-quality components in the construction ensures the attenuator's durability and stability in different operating conditions.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range allows this attenuator to be used in a wide range of environments without performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the attenuator can function effectively in cold conditions without any issues.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and conductivity, enhancing the performance and reliability of the attenuator.

Maximum Insertion Loss: 1.2 dB

The low insertion loss minimizes signal loss when the attenuator is inserted into a circuit, maintaining signal integrity and quality.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator, it allows for adjustable signal attenuation, offering flexibility in signal management for different applications.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance matches common RF and microwave systems, facilitating seamless integration and minimal signal reflection.

Minimum Operating Frequency: 0 MHz

The ability to operate at 0 MHz enables the attenuator to handle a wide range of frequencies, making it versatile for various frequency-dependent applications.

Maximum Operating Frequency: 6000 MHz

With a high maximum operating frequency of 6000 MHz, this attenuator is suitable for use in high-frequency RF and microwave systems.

Technical Specifications

RF/Microwave Attenuators HMC467LP3 attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

6 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

1.2 dB

JESD-609 Code:

e0

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC467LP3 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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