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HMC351S8

Analog Devices

HMC351S8 by Analog Devices

Analog Devices' HMC351S8 is a GAAS RF/Microwave Mixer with 8 terminals. It operates from 700 MHz to 1200 MHz, offering a max conversion loss of 11.5 dB and handling up to 27 dBm CW input power. Ideal for applications requiring double balanced mixers in the RF/microwave domain.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,908 parts In-Stock

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3,908

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Digiode

USA . 859 parts In-Stock

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859

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Speed Components Ltd

Israel . 8 parts In-Stock

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8

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Distributors (Availability)

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Parana Technologies

USA . 1,309 parts In-Stock

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$1.623

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$1.509

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1,309

$1.623

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IDEA Electronic Components Group

UK . 660 parts In-Stock

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$1.745

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$1.658

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660

$1.745

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$1.658

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DigiPath Technology Company

USA . 2,053 parts In-Stock

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$2.722

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$2.613

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$2.722

$2.613

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AZTECH Wire

Italy . 382 parts In-Stock

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$10.122

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382

$10.122

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One Stop Electronics

USA . 1,269 parts In-Stock

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$11.000

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$11.000

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Semicontronic

India . 932 parts In-Stock

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$37.000

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$36.075

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$35.890

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932

$37.000

$36.075

$35.890

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QUARKTWIN TECHNOLOGY LTD

USA . 7,897 parts In-Stock

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Corphita

USA . 309 parts In-Stock

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Overview

Experience the superior quality and performance of the HMC351S8 RF/Microwave Mixer from Analog Devices. With a reputation for excellence in the industry, Analog Devices delivers cutting-edge technology and reliability in every product. The HMC351S8 offers unmatched value and benefits to customers, providing exceptional conversion loss and high input power capabilities. Ideal for a wide range of applications, this double balanced mixer is perfect for demanding RF and microwave systems. Trust Analog Devices to deliver the quality and innovation you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the mixer lightweight and cost-effective while still maintaining durability.

Maximum Input Power (CW): 27 dBm

With a high maximum input power, this mixer can handle strong signals without distortion or damage, ensuring reliable performance.

Construction: COMPONENT

Being a component-based construction, this mixer allows for easier integration into larger RF systems and provides flexibility in design.

No. of Terminals: 8

The presence of 8 terminals allows for versatile connectivity options, making it suitable for various circuit configurations.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this mixer can withstand harsh environmental conditions and continue to function optimally.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable operation even in cold temperatures, making it suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and conductivity, ensuring secure connections and optimal electrical performance.

Technology: GAAS

Utilizing Gallium Arsenide technology offers high-frequency performance and low noise, making it ideal for RF and microwave applications.

RF or Microwave Device Type: DOUBLE BALANCED

The double balanced design helps in minimizing unwanted signal mixing and spurious responses, resulting in better signal purity and higher performance.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance matches common RF system requirements, ensuring efficient power transfer and signal integrity.

Maximum Conversion Loss: 11.5 dB

With a low maximum conversion loss, this mixer maintains signal strength during frequency conversion, leading to minimal signal degradation.

Minimum Operating Frequency: 700 MHz

The ability to operate at a low frequency of 700 MHz makes this mixer suitable for a wide range of RF and microwave applications.

Mounting Feature: SURFACE MOUNT

The surface mount configuration simplifies the installation process and allows for compact integration into electronic circuit boards.

Maximum Operating Frequency: 1200 MHz

With a high maximum operating frequency, this mixer can handle a wide range of RF and microwave signals, offering versatility in applications.

Technical Specifications

RF/Microwave Mixers HMC351S8 attributes and parameters. Explore more RF/Microwave Mixers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

11.5 dB

Maximum Input Power (CW):

27 dBm

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

8

Maximum Operating Frequency:

1200 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SOP8,.25

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC351S8 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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