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HMC336MS8G

Analog Devices

HMC336MS8G by Analog Devices

Analog Devices' HMC336MS8G is a RF/Microwave Switch with 27.99 dBm CW input power, 2 dB max insertion loss, and 37 dB min isolation. Ideal for SPDT applications in GAAS technology, operating from -40 to 85 °C with a frequency range of 0-6000 MHz.

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Vyrian

USA . 4,291 parts In-Stock

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Digiode

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Connector Distribution Corp

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Right Parts Inc.

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Cogito LLC

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Prism Electronics

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Parana Technologies

USA . 4,174 parts In-Stock

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IDEA Electronic Components Group

UK . 1,683 parts In-Stock

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DigiPath Technology Company

USA . 104 parts In-Stock

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AZTECH Wire

Italy . 892 parts In-Stock

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One Stop Electronics

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Semicontronic

India . 1,226 parts In-Stock

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RC Electronics

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Overview

Unlock the power of seamless RF/Microwave switching with the HMC336MS8G by Analog Devices. Known for their top-notch quality and reliability, Analog Devices brings you a cutting-edge solution for your RF/Microwave applications. This SPDT switch offers maximum insertion loss of just 2 dB and minimum isolation of 37 dB, ensuring superior performance every time. With a wide operating frequency range from 0 MHz to 6000 MHz, this component is perfect for a variety of applications. Trust Analog Devices to deliver exceptional value and unmatched benefits with the HMC336MS8G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this switch lightweight and durable, ideal for portable or rugged applications.

Maximum Input Power (CW): 27.99 dBm

With a high maximum input power capacity, this switch can handle strong signals without distortion or damage.

Compression Point (1 dB): 25 dBm

The high compression point ensures that the switch maintains linearity even at high power levels, leading to accurate signal switching.

Construction: COMPONENT

Being a component-based switch, it offers flexibility in design and integration into larger RF systems.

No. of Terminals: 8

With 8 terminals, this switch provides versatile connectivity options for various RF signal paths.

Maximum Operating Temperature: 85 °C

The high operating temperature range allows this switch to be used in harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this switch can operate reliably in cold environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability for reliable signal transmission.

Maximum Insertion Loss: 2 dB

The low insertion loss of 2 dB ensures minimal signal degradation when passing through the switch.

Nominal On Time: 0.02 us

The fast on-time of 0.02 microseconds ensures quick signal switching for efficient operation.

Technology: GAAS

The Gallium Arsenide (GaAs) technology used in this switch provides high-performance RF switching capabilities.

RF or Microwave Device Type: SPDT

As a Single Pole Double Throw switch, it offers flexibility in signal routing and switching options.

Characteristic Impedance: 50 ohm

With a standard impedance of 50 ohms, this switch is compatible with many RF systems and components.

Minimum Isolation: 37 dB

The high isolation of 37 dB ensures minimal signal interference or leakage between switch ports.

Minimum Operating Frequency: 0 MHz

The ability to operate at 0 MHz makes this switch suitable for a wide range of RF and microwave applications.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure mounting on circuit boards or other surfaces.

Maximum Operating Frequency: 6000 MHz

With a high maximum operating frequency of 6000 MHz, this switch is suitable for many RF and microwave applications.

Port Termination: ABSORPTIVE

The absorptive port termination helps in reducing unwanted signal reflections and ensuring signal integrity.

Technical Specifications

RF/Microwave Switches HMC336MS8G attributes and parameters. Explore more RF/Microwave Switches devices from Analog Devices

Specs

Compression Point (1 dB):

25 dBm

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

27.99 dBm

Maximum Insertion Loss:

2 dB

Minimum Isolation:

37 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Nominal On Time:

.02 us

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

Port Termination:

ABSORPTIVE

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Switches

Technology:

Terminal Finish:

TIN LEAD

Trade Compliance

HMC336MS8G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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