Loading...

Taiwan Semiconductor Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TSM2N7002KCXRFG by Taiwan Semiconductor

TSM2N7002KCXRFG

Taiwan Semiconductor

TSM2N7002KCXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max drain current of 0.3A and drain-source resistance of 2 ohm, it offers reliable performance in small outline packages.

SINGLE WITH BUILT-IN DIODE

60 V

.3 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-G3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.357 W

.357 W

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

TSM126CXRFG by Taiwan Semiconductor

TSM126CXRFG

Taiwan Semiconductor

TSM126CXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. It features a built-in diode, 800 ohm max RDS(on), and 0.03A max ID. This SMALL OUTLINE transistor operates in DEPLETION MODE and has GULL WING terminals for surface mount assembly.

SINGLE WITH BUILT-IN DIODE

600 V

.03 A

800 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

3

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

YES

GULL WING

DUAL

30

SWITCHING

SILICON

TSM2301CXRFG by Taiwan Semiconductor

TSM2301CXRFG

Taiwan Semiconductor

TSM2301CXRFG by Taiwan Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 2.8A ID, operating in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 0.13 ohm RDS(on) and GULL WING terminals for surface mount assembly.

ULTRA LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

20 V

2.8 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON