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National Semiconductor Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSS138/L99Z by National Semiconductor

BSS138/L99Z

National Semiconductor

BSS138/L99Z by National Semiconductor is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.22A ID, and 6 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

50 V

.22 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-236AB

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

2N7002/L99Z by National Semiconductor

2N7002/L99Z

National Semiconductor

2N7002/L99Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, with 0.115A ID and 7.5Ω RDS(on). The transistor operates b/w -55°C to 150°C, featuring a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-236AB

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

NDS7002A/D87Z by National Semiconductor

NDS7002A/D87Z

National Semiconductor

NDS7002A/D87Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3W Power Dissipation, and 150°C Max Operating Temp. Ideal for SWITCHING applications due to SINGLE configuration with BUILT-IN DIODE. Features GULL WING terminals in PLASTIC/EPOXY package style.

SINGLE WITH BUILT-IN DIODE

60 V

.28 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-236AB

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.3 W

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

PN4303/D26Z by National Semiconductor

PN4303/D26Z

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: AMPLIFIER; Terminal Form: THROUGH-HOLE;

SINGLE

JUNCTION

3 pF

TO-92

O-PBCY-T3

1

3

DEPLETION MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

2N5457/D26Z by National Semiconductor

2N5457/D26Z

National Semiconductor

2N5457/D26Z by National Semiconductor is a N-CHANNEL DEPLETION MODE FET with PLASTIC/EPOXY package. It has a max feedback capacitance of 3 pF and is commonly used for SWITCHING applications.

SINGLE

JUNCTION

3 pF

TO-92

O-PBCY-T3

1

3

DEPLETION MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2N5457/D27Z by National Semiconductor

2N5457/D27Z

National Semiconductor

2N5457/D27Z by National Semiconductor is a N-CHANNEL FET with DEPLETION MODE operation. It has 3 terminals, PLASTIC/EPOXY body, and 3 pF Crss. Ideal for SWITCHING applications due to its JUNCTION technology and SINGLE configuration in a CYLINDRICAL package.

SINGLE

JUNCTION

3 pF

TO-92

O-PBCY-T3

1

3

DEPLETION MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON