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International Rectifier Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
IRF7478QTRPBF by International Rectifier

IRF7478QTRPBF

International Rectifier

IRF7478QTRPBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max ID of 7A and 0.026 ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. Suitable for surface mount with GULL WING terminals, this transistor offers high performance in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

60 V

7 A

7 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

MS-012AA

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.5 W

FET General Purpose Power

YES

GULL WING

DUAL

SWITCHING

SILICON

IRF3000PBF by International Rectifier

IRF3000PBF

International Rectifier

IRF3000PBF by International Rectifier is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.6A Drain Current, 0.4 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has GULL WING terminals and is designed for ENHANCEMENT MODE operation.

SINGLE WITH BUILT-IN DIODE

300 V

1.6 A

.0016 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7807VD2PBF by International Rectifier

IRF7807VD2PBF

International Rectifier

IRF7807VD2PBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage and 8.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has 0.025 ohm On Resistance and can handle up to 2.5W power dissipation at 150°C max temperature.

SINGLE WITH BUILT-IN DIODE

30 V

8.3 A

8.3 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF5851TRPBF by International Rectifier

IRF5851TRPBF

International Rectifier

IRF5851TRPBF by International Rectifier is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications, operating in enhancement mode. With a max drain current of 2.7A and a min DS breakdown voltage of 20V, it is suitable for various electronic circuits requiring high performance in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.7 A

2.7 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

2

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.96 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON