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80 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
STL20NM20N by STMicroelectronics

STL20NM20N

STMicroelectronics

STL20NM20N by STMicroelectronics is a N-CHANNEL FET with 200V DS Breakdown Voltage, 20A ID, and 0.105 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 80W power dissipation and -55 to 150°C operating temperature range.

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

20 A

20 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-N8

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

FET General Purpose Power

YES

NO LEAD

DUAL

SWITCHING

SILICON