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33 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS4C05NTAG by Onsemi

NTTFS4C05NTAG

Onsemi

NTTFS4C05NTAG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.0051 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150°C with Matte Tin finish.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

75 A

12 A

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTMFS4C05NT1G-001 by Onsemi

NTMFS4C05NT1G-001

Onsemi

NTMFS4C05NT1G-001 by Onsemi is a N-channel FET with 78A max drain current and 33W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.

SINGLE

78 A

78 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

N-CHANNEL

33 W

FET General Purpose Power

YES