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30 W Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SK3484(0)-Z-E1-AZ by Renesas Electronics

2SK3484(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 16 A;

SINGLE

16 A

16 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377(0)-Z-E1-AZ by Renesas Electronics

2SK3377(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Drain Current (Abs) (ID): 20 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377(0)-Z-E2-AZ by Renesas Electronics

2SK3377(0)-Z-E2-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3377-Z-E1-AZ by Renesas Electronics

2SK3377-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 20 A;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SK3377-Z-E2-AZ by Renesas Electronics

2SK3377-Z-E2-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; JEDEC-95 Code: TO-252; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 W

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

TPCC8093,L1Q by Toshiba

TPCC8093,L1Q

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Minimum DS Breakdown Voltage: 20 V; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

21 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

140 pF

S-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

30 W

YES

FLAT

DUAL

SWITCHING

SILICON