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3 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SI4401DY-T1-GE3 by Vishay Intertechnology

SI4401DY-T1-GE3

Vishay Intertechnology

SI4401DY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A Drain Current, and 0.0155 ohm On Resistance. Ideal for applications requiring high power dissipation in small outline packages like power management systems and voltage regulators.

SINGLE WITH BUILT-IN DIODE

40 V

8.7 A

8.7 A

.0155 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SILICON

SI4401DY-T1-E3 by Vishay Intertechnology

SI4401DY-T1-E3

Vishay Intertechnology

SI4401DY-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 40V DS Breakdown Voltage, 8.7A ID, and 0.0155 ohm RDS(ON). Ideal for applications requiring high drain current capability in compact designs.

SINGLE WITH BUILT-IN DIODE

40 V

8.7 A

8.7 A

.0155 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SILICON