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28 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS024N06CTAG by Onsemi

NTTFS024N06CTAG

Onsemi

NTTFS024N06CTAG by Onsemi is a N-channel FET with 60V DS breakdown voltage and 24A max drain current. Ideal for power management applications, it operates in enhancement mode with a low on-resistance of 0.0226 ohm. Suitable for surface mount designs, it has a max power dissipation of 28W and can withstand temperatures from -55 to 175 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

.0226 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

28 W

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON