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23 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SJ598(0)-Z-E1-AZ by Renesas Electronics

2SJ598(0)-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; JEDEC-95 Code: TO-252; Case Connection: DRAIN;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

1 W

23 W

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

2SJ598-AY by Renesas Electronics

2SJ598-AY

Renesas Electronics

The Renesas Electronics 2SJ598-AY is a P-CHANNEL FET with 60V DS breakdown voltage and 12A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating in enhancement mode, it has a max power dissipation of 23W and can withstand temperatures up to 150°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

P-CHANNEL

1 W

23 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON