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2.9 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SI4286DY-T1-GE3 by Vishay Intertechnology

SI4286DY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4286DY-T1-GE3 is a N-channel FET with 2 elements & built-in diode. It has a max drain current of 7A, on-resistance of 0.0325 ohm, and operates in enhancement mode for switching applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly up to 260°C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

7 A

7 A

.0325 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.9 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

30

SWITCHING

SILICON