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2.6 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMS5835NLR2G by Onsemi

NTMS5835NLR2G

Onsemi

NTMS5835NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 12A Drain Current. Ideal for applications requiring high power dissipation up to 2.6W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low on-resistance of 0.014 ohm for efficient performance at temperatures up to 150 °C.

SINGLE WITH BUILT-IN DIODE

40 V

12 A

9.2 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.6 W

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

NTMS5838NLR2G by Onsemi

NTMS5838NLR2G

Onsemi

NTMS5838NLR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage, 7.5A max drain current, and 0.0308 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages at up to 150°C operating temperature.

SINGLE WITH BUILT-IN DIODE

40 V

7.5 A

5.8 A

.0308 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.6 W

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

DMN16M0UCA6-7 by Diodes Incorporated

DMN16M0UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 2; Package Body Material: UNSPECIFIED;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

2.6 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON