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2.2 W Small Signal Field Effect Transistors (FET) 11

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMG7702SFG-13 by Diodes Incorporated

DMG7702SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Transistor Element Material: SILICON;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMG7702SFG-7 by Diodes Incorporated

DMG7702SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP3008SFG-13 by Diodes Incorporated

DMP3008SFG-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

8.6 A

7.1 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.2 W

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMS3012SFG-13 by Diodes Incorporated

DMS3012SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .01 ohm;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMS3012SFG-7 by Diodes Incorporated

DMS3012SFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Maximum Drain Current (ID): 9.5 A; Terminal Position: DUAL;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

12 A

9.5 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.2 W

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTLUD3A50PZTAG by Onsemi

NTLUD3A50PZTAG

Onsemi

NTLUD3A50PZTAG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

P-CHANNEL

2.2 W

Other Transistors

YES

MATTE TIN

30

NTLUD3A50PZTBG by Onsemi

NTLUD3A50PZTBG

Onsemi

NTLUD3A50PZTBG by Onsemi is a P-CHANNEL FET with 4.4A max drain current and 2.2W max power dissipation. Ideal for small signal applications, it operates at up to 150 °C and features surface mount technology, making it suitable for various electronic devices.

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

P-CHANNEL

2.2 W

Other Transistors

YES

MATTE TIN

30

NTHS4166NT1G by Onsemi

NTHS4166NT1G

Onsemi

NTHS4166NT1G by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 8.2A max drain current, and 0.022 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a built-in diode, small outline package style, and can withstand up to 150°C operating temperature.

SINGLE WITH BUILT-IN DIODE

30 V

8.2 A

4.9 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

C BEND

DUAL

30

SWITCHING

SILICON

DMC1029UFDB-13 by Diodes Incorporated

DMC1029UFDB-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

5.6 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

119 pF

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

2.2 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMG7401SFGQ-13 by Diodes Incorporated

DMG7401SFGQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

HIGH RELIABILITY

DRAIN

SINGLE

30 V

9.8 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

391 pF

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.2 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMG7401SFGQ-7 by Diodes Incorporated

DMG7401SFGQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-30 Code: R-PDSO-N5; Transistor Application: SWITCHING;

HIGH RELIABILITY

DRAIN

SINGLE

30 V

9.8 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

391 pF

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.2 W

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON