Loading...

2.17 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PMV65UN,215 by NXP Semiconductors

PMV65UN,215

NXP Semiconductors

PMV65UN,215 by NXP Semiconductors is an N-channel FET designed for switching applications. It features a max drain current of 2.2 A, a breakdown voltage of 20 V, and operates at up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2 A

.076 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.17 W

IEC-60134

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON