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2.1 W Small Signal Field Effect Transistors (FET) 7

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMS3014SFG-13 by Diodes Incorporated

DMS3014SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain Current (ID): 9 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

9.5 A

9 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP1022UFDF-13 by Diodes Incorporated

DMP1022UFDF-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Additional Features: HIGH RELIABILITY; Package Shape: SQUARE;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

9.5 A

.026 ohm

METAL-OXIDE SEMICONDUCTOR

467 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.1 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

NTHD3133PFT1G by Onsemi

NTHD3133PFT1G

Onsemi

NTHD3133PFT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. It has a 20V DS Breakdown Voltage, 3.2A Drain Current, and 0.08 ohm On Resistance. With ENHANCEMENT MODE operation and RECTANGULAR package shape, it's ideal for high-power circuit designs requiring efficient switching capabilities.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.1 W

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON

NTHD3133PFT3G by Onsemi

NTHD3133PFT3G

Onsemi

NTHD3133PFT3G by Onsemi is a P-CHANNEL FET for switching applications. Features include 20V DS breakdown voltage, 3.2A max drain current, and 0.08 ohm max on resistance. Ideal for enhancement mode operation in small outline packages with tin finish terminals.

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.1 W

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON

NTHD4N02FT1 by Onsemi

NTHD4N02FT1

Onsemi

NTHD4N02FT1 by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 3.1A Drain Current, and 0.08 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.1W and can withstand temperatures up to 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

2.9 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-XDSO-C8

e0

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

2.1 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTF3055-100T3G by Onsemi

NTF3055-100T3G

Onsemi

NTF3055-100T3G by Onsemi is a small signal FET with N-channel polarity. It features a max drain current of 3A, operating in enhancement mode for switching applications. With a package style of small outline and Gull Wing terminals, it offers a max power dissipation of 2.1W at an operating temperature of 175°C.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

155 pF

TO-261AA

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTHD5903T1G by Onsemi

NTHD5903T1G

Onsemi

NTHD5903T1G by Onsemi is a P-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 2.2A, on-resistance of 0.155 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 2.1W power dissipation at a max temp of 150 °C, making it suitable for various electronic circuits.

LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.155 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.1 W

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON