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1.56 W Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSO119N03S by Infineon Technologies

BSO119N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; JESD-30 Code: R-PDSO-G8; Package Shape: RECTANGULAR;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

30 V

9 A

9 A

.0119 ohm

METAL-OXIDE SEMICONDUCTOR

93 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO200N03S by Infineon Technologies

BSO200N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; JESD-609 Code: e3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

30 V

7 A

7 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

46 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO300N03S by Infineon Technologies

BSO300N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Moisture Sensitivity Level (MSL): 3; JEDEC-95 Code: MS-012AA;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

30 V

5.7 A

5.7 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

34 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO104N03S by Infineon Technologies

BSO104N03S

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; Maximum Drain Current (ID): 10 A; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

30 V

10 A

10 A

.0097 ohm

METAL-OXIDE SEMICONDUCTOR

110 pF

MS-012AA

R-PDSO-G8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

NUD3048MT1 by Onsemi

NUD3048MT1

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.56 W; No. of Elements: 1; Terminal Position: DUAL;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

100 V

1.2 A

1.2 A

.82 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e0

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NUD3048MT1G by Onsemi

NUD3048MT1G

Onsemi

NUD3048MT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a built-in diode and resistor, operates in enhancement mode, and has a max drain current of 1.2A. With surface mount capability and small outline package style, it offers high performance in compact designs.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

100 V

1.2 A

1.2 A

.82 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.56 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON