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1.52 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMS4705NR2G by Onsemi

NTMS4705NR2G

Onsemi

NTMS4705NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10A Drain Current, and 0.01 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates up to 150 °C.

SINGLE WITH BUILT-IN DIODE

30 V

10 A

7.4 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.52 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON