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1.2 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN2300UFB-7B by Diodes Incorporated

DMN2300UFB-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY, LOW THRESHOLD

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1.78 A

1.32 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

1.2 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMC25D0UVT-13 by Diodes Incorporated

DMC25D0UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;

HIGH RELIABILITY

COMPLEX

25 V

3.2 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

47 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.2 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

NVC3S5A51PLZT1G by Onsemi

NVC3S5A51PLZT1G

Onsemi

NVC3S5A51PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 1.7A ID and 0.25 ohm Drain-Source Resistance, suitable for high-temp environments up to 175 °C.

SINGLE WITH BUILT-IN DIODE

60 V

1.7 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e6

1

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.2 W

AEC-Q101

YES

TIN BISMUTH

GULL WING

DUAL

30

SWITCHING

SILICON

DMN1023UCB4-7 by Diodes Incorporated

DMN1023UCB4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; JESD-30 Code: S-PBGA-B4; Minimum DS Breakdown Voltage: 12 V;

SINGLE WITH BUILT-IN DIODE

12 V

5.1 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

S-PBGA-B4

e1

1

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

N-CHANNEL

1.2 W

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON