Loading...

1.13 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTHD5904NT1 by Onsemi

NTHD5904NT1

Onsemi

NTHD5904NT1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode, ideal for switching applications. Features include: Max Drain Current of 3.3A, Min DS Breakdown Voltage of 20V, and Max Power Dissipation of 1.13W. Its small outline package style & max operating temp of 150 °C make it suitable for various electronic designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.3 A

2.5 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.13 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHD5904NT3 by Onsemi

NTHD5904NT3

Onsemi

NTHD5904NT3 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.3A Drain Current, 0.065 ohm On Resistance. Operates in ENHANCEMENT MODE up to 150 °C, with small outline package & tin lead finish.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.3 A

2.5 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.13 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON