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.95 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN2500UFB4-7B by Diodes Incorporated

DMN2500UFB4-7B

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Drain Current (ID): .81 A; JESD-30 Code: R-PBCC-N3;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1 A

.81 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.95 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN2500UFB4-7 by Diodes Incorporated

DMN2500UFB4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Maximum Operating Temperature: 150 Cel; JESD-30 Code: R-PBCC-N3;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

1 A

.81 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.95 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

TPIC2322LD by Texas Instruments

TPIC2322LD

Texas Instruments

TPIC2322LD by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 3 ELEMENTS with BUILT-IN DIODE, 0.75A Max Drain Current, and 0.7 ohm Drain-Source On Resistance. With a 60V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at up to 150°C.

LOGIC LEVEL COMPATIBLE

ISOLATED

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

60 V

.75 A

.75 A

.7 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

MS-012AA

R-PDSO-G8

3

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.95 W

.95 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON