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.91 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTHD4N02FT1G by Onsemi

NTHD4N02FT1G

Onsemi

NTHD4N02FT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 2.7A Drain Current, and 0.08ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode. Operates at up to 125 °C with a peak reflow temperature of 260°C in small outline package style.

SINGLE WITH BUILT-IN DIODE

20 V

2.7 A

2.9 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

125 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.91 W

Not Qualified

FET General Purpose Power

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON