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.37 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMG6301UDW-7 by Diodes Incorporated

DMG6301UDW-7

Diodes Incorporated

DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

25 V

.24 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.37 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMC31D5UDAQ-7B by Diodes Incorporated

DMC31D5UDAQ-7B

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; No. of Terminals: 6; Terminal Position: BOTTOM;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

1.8 pF

R-PBCC-N6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL AND P-CHANNEL

.37 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

BOTTOM

SWITCHING

SILICON