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.329 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTS4101PT1 by Onsemi

NTS4101PT1

Onsemi

NTS4101PT1 by Onsemi is a P-CHANNEL FET for switching applications. It features a 20V DS breakdown voltage, 1.37A max drain current, and 0.12 ohm max on-resistance. With a small outline package and GULL WING terminals, it operates in enhancement mode up to 150 °C.

SINGLE WITH BUILT-IN DIODE

20 V

1.37 A

1.37 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

85 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

.329 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON