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.28 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTZD3156CT1G by Onsemi

NTZD3156CT1G

Onsemi

NTZD3156CT1G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 0.54A drain current, 0.55 ohm on-resistance, and 150 °C max temp.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTZD3156CT2G by Onsemi

NTZD3156CT2G

Onsemi

NTZD3156CT2G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode & resistor. Ideal for switching applications, it has a max drain current of 0.54A, on-resistance of 0.55 ohm, and operates at up to 150 °C. Suitable for surface mount with 6 terminals in a small outline package.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTZD3156CT5G by Onsemi

NTZD3156CT5G

Onsemi

NTZD3156CT5G by Onsemi is a Small Signal FET with N/P-Channel, 2 elements, diode, and resistor. It operates in enhancement mode for switching applications with max drain current of 0.54A and on-resistance of 0.55Ω. This MOSFET has a breakdown voltage of 20V and can handle up to 150 °C operating temperature.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.54 A

.54 A

.55 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.28 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

SI1034X-T1-GE3 by Vishay Intertechnology

SI1034X-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI1034X-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 20V, max drain current of 0.18A, and max power dissipation of 0.28W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.

LOW THRESHOLD

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.18 A

.18 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.28 W

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON