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.23 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSS83,215 by NXP Semiconductors

BSS83,215

NXP Semiconductors

NXP Semiconductors' BSS83,215 is a N-CHANNEL FET with 10V DS Breakdown Voltage and 0.05A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.23W at 125°C.

SUBSTRATE

SINGLE WITH BUILT-IN DIODE

10 V

.05 A

.05 A

120 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

1

4

ENHANCEMENT MODE

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.23 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON