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.218 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTNS3A65PZT5G by Onsemi

NTNS3A65PZT5G

Onsemi

NTNS3A65PZT5G by Onsemi is a P-CHANNEL FET with max drain current of 0.281A and power dissipation of 0.218W. Ideal for applications requiring high temperature resistance up to 150°C, such as in surface mount configurations for electronic devices.

SINGLE

.281 A

.281 A

METAL-OXIDE SEMICONDUCTOR

e4

1

1

150 Cel

260

P-CHANNEL

.218 W

Other Transistors

YES

NICKEL PALLADIUM GOLD

30