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.21 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTZS3151PT1H by Onsemi

NTZS3151PT1H

Onsemi

NTZS3151PT1H by Onsemi is a P-CHANNEL FET with 0.86A max drain current and 0.21W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features metal-oxide semiconductor technology.

SINGLE

.86 A

.86 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

P-CHANNEL

.21 W

Other Transistors

YES

TIN

30