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.2 W Small Signal Field Effect Transistors (FET) 22

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN55D0UTQ-7 by Diodes Incorporated

DMN55D0UTQ-7

Diodes Incorporated

DMN55D0UTQ-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.16A max drain current, and 4 ohm max on resistance. It's used in small outline packages for enhancement mode operation in applications requiring high temperature tolerance up to 150°C like automotive electronics (AEC-Q101).

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

50 V

.16 A

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

2N7002/L99Z by National Semiconductor

2N7002/L99Z

National Semiconductor

2N7002/L99Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications in ENHANCEMENT MODE, with 0.115A ID and 7.5Ω RDS(on). The transistor operates b/w -55°C to 150°C, featuring a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-236AB

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

UPA677TB-T1-A by Renesas Electronics

UPA677TB-T1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .35 A; Terminal Finish: TIN BISMUTH; Maximum Drain Current (ID): .35 A;

.35 A

.35 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

.2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA679TB-T1-A by Renesas Electronics

UPA679TB-T1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e6; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;

.35 A

.35 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL AND P-CHANNEL

.2 W

Other Transistors

YES

TIN BISMUTH

2SJ648-T1-A by Renesas Electronics

2SJ648-T1-A

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e6;

SINGLE

.4 A

.4 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

P-CHANNEL

.2 W

Other Transistors

YES

TIN BISMUTH

NTUD3171PZT5G by Onsemi

NTUD3171PZT5G

Onsemi

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .2 A;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

.2 A

.2 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.2 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

2N7002-E3 by Vishay Intertechnology

2N7002-E3

Vishay Intertechnology

2N7002-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.2W in enhancement mode operation at temperatures up to 150°C.

SINGLE

60 V

.115 A

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

NMSD200B01-7 by Diodes Incorporated

NMSD200B01-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30;

SINGLE WITH BUILT-IN DIODE

60 V

.2 A

.2 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

1

6

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTUD3128NT5G by Onsemi

NTUD3128NT5G

Onsemi

NTUD3128NT5G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.16A, and Max Power Dissipation of 0.2W. This small outline transistor operates in enhancement mode at temperatures up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.16 A

.16 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

NICKEL GOLD PALLADIUM

FLAT

DUAL

30

SWITCHING

SILICON

DMN66D0LW-7 by Diodes Incorporated

DMN66D0LW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Minimum DS Breakdown Voltage: 60 V;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

.115 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN55D0UT-7 by Diodes Incorporated

DMN55D0UT-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

50 V

.16 A

.16 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

RK7002AT116 by ROHM

RK7002AT116

ROHM

ROHM RK7002AT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A max drain current, and 1.5 ohm RDS(on). Ideal for switching applications in small outline packages with GULL WING terminals. Operating in enhancement mode at up to 150°C, it offers efficient performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE

60 V

.3 A

.3 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN SILVER COPPER

GULL WING

DUAL

SWITCHING

SILICON

BSS123W-7 by Diodes Incorporated

BSS123W-7

Diodes Incorporated

BSS123W-7 by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.

SINGLE WITH BUILT-IN DIODE

100 V

.17 A

.17 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

6 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

.2 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

BSS138W-7 by Diodes Incorporated

BSS138W-7

Diodes Incorporated

BSS138W-7 by Diodes Inc. is a N-channel FET with 50V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in small outline packages.

SINGLE WITH BUILT-IN DIODE

50 V

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

.2 W

Not Qualified

UL RECOGNIZED

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

BSS138DW-7 by Diodes Incorporated

BSS138DW-7

Diodes Incorporated

BSS138DW-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm max on resistance. Ideal for switching applications, it features a small outline package with Gull Wing terminals and operates in enhancement mode up to 150°C.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.2 A

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-G6

e0

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SWITCHING

SILICON

BSS84W-7 by Diodes Incorporated

BSS84W-7

Diodes Incorporated

BSS84W-7 by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode at up to 150°C.

SINGLE WITH BUILT-IN DIODE

50 V

.13 A

.13 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

.2 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

2N7002W-7 by Diodes Incorporated

2N7002W-7

Diodes Incorporated

2N7002W-7 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage and 0.115A drain current, ideal for switching applications. It features a built-in diode, Gull Wing terminals, and operates in enhancement mode. With a max power dissipation of 0.2W and small outline package style, it offers efficient performance up to 150°C.

SINGLE WITH BUILT-IN DIODE

60 V

.115 A

.115 A

7.5 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DMN5L06DW-7 by Diodes Incorporated

DMN5L06DW-7

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

LOW CAPACITANCE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN5L06W-7 by Diodes Incorporated

DMN5L06W-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;

SINGLE WITH BUILT-IN DIODE

50 V

.28 A

.28 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BSS84W-G by Comchip Technology

BSS84W-G

Comchip Technology

Comchip Technology's BSS84W-G is a P-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 0.2W Power Dissipation, 0.13A Drain Current, and 10 ohm On Resistance.

SINGLE WITH BUILT-IN DIODE

50 V

.13 A

10 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

.2 W

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BSS138WG by Changzhou Galaxy Century Microelectronics

BSS138WG

Changzhou Galaxy Century Microelectronics

BSS138WG by Changzhou Galaxy Century Microelectronics is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for SWITCHING applications. It features SINGLE configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With 0.2W power dissipation and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic circuits.

SINGLE WITH BUILT-IN DIODE

50 V

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

3.5 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

BSS138WQ-13-F by Diodes Incorporated

BSS138WQ-13-F

Diodes Incorporated

BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.

SINGLE WITH BUILT-IN DIODE

50 V

.2 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

.2 W

AEC-Q101; UL RECOGNIZED

YES

GULL WING

DUAL

SWITCHING

SILICON