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.125 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FC6946010R by Panasonic

FC6946010R

Panasonic

FC6946010R by Panasonic is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.1A Drain Current, and 15 ohm On Resistance. Operating in ENHANCEMENT MODE, it features a max power dissipation of 0.125W at 150°C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.1 A

.1 A

15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.125 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTNS5K0P021ZTCG by Onsemi

NTNS5K0P021ZTCG

Onsemi

NTNS5K0P021ZTCG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and RESISTOR, operating in ENHANCEMENT MODE. With a max power dissipation of 0.125W and temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

20 V

.127 A

5.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

.125 W

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON