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.12 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTNS3C94NZT5G by Onsemi

NTNS3C94NZT5G

Onsemi

NTNS3C94NZT5G by Onsemi is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.384A ID, and 0.48ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 150 °C, featuring PLASTIC/EPOXY package and NO LEAD terminals.

DRAIN

SINGLE WITH BUILT-IN DIODE AND RESISTOR

12 V

.384 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

N-CHANNEL

.12 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

SINGLE

30

SWITCHING

SILICON